The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2022
Filed:
Apr. 30, 2018
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Hsin-Chang Lee, Hsinchu County, TW;
Ping-Hsun Lin, New Taipei, TW;
Yen-Cheng Ho, Taichung, TW;
Chih-Cheng Lin, Kaohsiung, TW;
Chia-Jen Chen, Hsinchu County, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/24 (2012.01); G03F 1/52 (2012.01); G03F 1/68 (2012.01); G03F 1/54 (2012.01); G03F 1/26 (2012.01);
U.S. Cl.
CPC ...
G03F 1/24 (2013.01); G03F 1/26 (2013.01); G03F 1/52 (2013.01); G03F 1/54 (2013.01); G03F 1/68 (2013.01);
Abstract
A method of fabricating a photomask includes selectively exposing portions of a photomask blank to radiation to change an optical property of the portions of the photomask blank exposed to the radiation, thereby forming a pattern of exposed portions of the photomask blank and unexposed portions of the photomask blank. The pattern corresponds to a pattern of semiconductor device features.