The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2022
Filed:
Oct. 23, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Yen-Hsung Ho, Taoyuan County, TW;
Chia-Yi Tseng, Tainan, TW;
Chih-Hsun Lin, Tainan, TW;
Kun-Tsang Chuang, Miaoli County, TW;
Yung-Lung Hsu, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method includes capturing an image of a wafer, the wafer comprising a first conductive contact over an active region of the wafer and a second conductive contact over a shallow trench isolation (STI) region abutting the active region; identifying a brightness of a first contact region in the captured image at which the first conductive contact is rendered; identifying a brightness of a second contact region in the captured image at which the second conductive contact is rendered; and in response to the identified brightness of the first contact region in the captured image being substantially the same as the identified brightness of the second contact region in the captured image, determining that the second conductive contact is shorted to the first conductive contact.