The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 30, 2022

Filed:

Mar. 30, 2021
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Hongmei Wang, Boise, ID (US);

Mingdong Cui, Folsom, CA (US);

Nevil N. Gajera, Meridian, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0069 (2013.01); G11C 13/0004 (2013.01); G11C 13/004 (2013.01); G11C 13/0026 (2013.01); G11C 13/0028 (2013.01);
Abstract

A memory device having memory cells, voltage drivers, and a controller configured to determine, based on an attribute of a memory cell, whether to apply a drift cancellation pulse that is in the opposite polarity of a programming pulse configured to place the memory cell in a state to represent a bit of data. If the drift in the state of the memory cell from a previous programming operation to write data into the memory cell is predicted to be insufficient to prevent the selection of the memory cell during the application of the programming pulse, the drift cancellation pulse is skipped. Otherwise, the drift cancellation pulse is applied in the opposite polarity of the programming pulse.


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