The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2022
Filed:
Jan. 27, 2021
SK Hynix Inc., Icheon-si, KR;
Jae Gil Lee, Seoul, KR;
Ju Ry Song, Suwon-si, KR;
Hyangkeun Yoo, Seongnam-si, KR;
Se Ho Lee, Yongin-si, KR;
SK hynix Inc., Icheon-si, WA (US);
Abstract
In a method, a stack structure including a plurality of first interlayer sacrificial layers and a plurality of second interlayer sacrificial layers that are alternately stacked is formed over a substrate. A trench penetrating the stack structure is formed. A channel layer covering a sidewall surface of the trench is formed. The plurality of first interlayer sacrificial layers are selectively removed to form a plurality of first recesses. The plurality of first recesses are filled with a conductive material to form a plurality of channel contact electrode layers. The plurality of second interlayer sacrificial layers are selectively removed to form a plurality of second recesses. A plurality of interfacial insulation layers, a plurality of ferroelectric layers and a plurality of gate electrode layers are formed in the plurality of second recesses.