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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11424132 B1

PDFFull Text
Date of Patent:
Aug. 23, 2022

Filed:

Oct. 02, 2019

Methods and apparatus for controlling contact resistance in cobalt-titanium structures

Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Takashi Kuratomi, San Jose, CA (US);

Avgerinos Gelatos, Scotts Valley, CA (US);

Tae Hong Ha, San Jose, CA (US);

Xuesong Lu, San Jose, CA (US);

Szuheng Ho, Sunnyvale, CA (US);

Wei Lei, Campbell, CA (US);

Mark Lee, Mountain View, CA (US);

Raymond Hung, Palo Alto, CA (US);

Xianmin Tang, San Jose, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:

Moser Taboada

Primary Examiner:

Erik T K. Peterson

Int. Cl.
CPC ...
H01L 21/3205 (2006.01); H01L 21/285 (2006.01); H01L 21/02 (2006.01); H01L 21/321 (2006.01); C23C 16/02 (2006.01); H01L 21/768 (2006.01); C23C 16/455 (2006.01); C23C 16/06 (2006.01); C23C 16/34 (2006.01); C23C 14/06 (2006.01); C23C 16/56 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32051 (2013.01); C23C 14/0641 (2013.01); C23C 16/0227 (2013.01); C23C 16/06 (2013.01); C23C 16/34 (2013.01); C23C 16/45525 (2013.01); C23C 16/56 (2013.01); H01L 21/0228 (2013.01); H01L 21/02186 (2013.01); H01L 21/02337 (2013.01); H01L 21/2855 (2013.01); H01L 21/28556 (2013.01); H01L 21/321 (2013.01); H01L 21/76895 (2013.01);
Abstract

Methods and apparatus for producing a reduced contact resistance for cobalt-titanium structures. In some embodiments, a method comprises depositing a titanium layer using a chemical vapor deposition (CVD) process, depositing a titanium nitride layer on the titanium layer using an atomic layer deposition (ALD) process, depositing a first cobalt layer on the titanium nitride layer using a physical vapor deposition (PVD) process, and depositing a second cobalt layer on the first cobalt layer using a CVD process.

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