The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 23, 2022

Filed:

Mar. 17, 2020
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Yuji Asakawa, Nirasaki, JP;

Nobuhiro Takahashi, Nirasaki, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/44 (2006.01); H01L 21/3065 (2006.01); H01L 21/67 (2006.01); C23C 16/22 (2006.01); C23C 16/458 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); C23C 16/22 (2013.01); C23C 16/4412 (2013.01); C23C 16/4582 (2013.01); H01L 21/31116 (2013.01); H01L 21/67017 (2013.01); H01L 21/6719 (2013.01); H01L 21/67276 (2013.01);
Abstract

A substrate etching apparatus for etching a substrate, the substrate etching apparatus includes a treatment container configured to accommodate a substrate, a stage on which the substrate is placed, the stage being disposed in the treatment container, a gas supply configured to supply a treatment gas from an upper space above the stage toward the stage, and a gas exhauster configured to evacuate an interior of the treatment container. The gas supply includes a central region facing a central part of the stage and an outer peripheral region having a same central axis as the central region and configured to surround the central region. The gas supply is capable of supplying the treatment gas to each of the central region and the outer peripheral region.


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