The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 23, 2022

Filed:

Dec. 29, 2020
Applicant:

Beneq Oy, Espoo, FI;

Inventors:

Pekka J. Soininen, Espoo, FI;

Vasil Vorsa, Coopersburg, PA (US);

Mohammad Ameen, Telford, PA (US);

Assignee:

BENEQ OY, Espoo, FI;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/40 (2006.01); C09D 1/00 (2006.01); C23C 16/455 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
C23C 16/40 (2013.01); C09D 1/00 (2013.01); C23C 16/45553 (2013.01); H01J 37/32495 (2013.01); H01J 2237/332 (2013.01);
Abstract

The invention relates to a method for fabricating a plasma etch-resistant film () on a surface of a substrate (), wherein the method comprises the step of forming a film comprising an intermediate layer () of rare earth metal oxide, rare earth metal carbonate, or rare earth metal oxycarbonate, or any mixture thereof on a first layer () of rare earth metal oxide, wherein the rare earth metal is the same in the first layer and in the intermediate layer. The invention further relates to a plasma etch-resistant film and to the use thereof.


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