The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 16, 2022

Filed:

Feb. 10, 2021
Applicant:

Disco Corporation, Tokyo, JP;

Inventors:

Shunsuke Teranishi, Tokyo, JP;

Shuichiro Tsukiji, Tokyo, JP;

Yuki Ikku, Tokyo, JP;

Assignee:

DISCO CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/78 (2006.01); H01L 21/268 (2006.01); H01L 23/544 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/78 (2013.01); H01L 21/268 (2013.01); H01L 22/20 (2013.01); H01L 23/544 (2013.01); H01L 2223/5446 (2013.01);
Abstract

A wafer processing method for forming a modified layer within a wafer along planned dividing lines forms the modified layer within the wafer, positions a condensing point within the wafer or at the top surface of the wafer and applies a second laser beam while moving the condensing point in a thickness direction of the wafer, images reflected light, and determines the processed state of the wafer on the basis of a photographed image. The second laser beam is formed such that the sectional shape of the second laser beam in a plane perpendicular to the traveling direction of the second laser beam is asymmetric with respect to the modified layer.


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