The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2022
Filed:
Jan. 15, 2021
Tokyo Electron Limited, Tokyo, JP;
Hitoshi Kato, Iwate, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A film forming method forms a silicon film on a substrate placed on a turntable which rotates and passes through first and second process regions that are mutually separated along a circumferential direction inside a vacuum chamber that is settable to a first temperature at which Si—H bond dissociation can occur. A film forming process includes forming a molecular layer of SiHon the substrate, by supplying a SiHgas that is set to a second temperature higher than the first temperature during a time period in which the substrate passes through the first process region, and forming a molecular layer of SiClon the substrate having the molecular layer of SiHformed thereon while causing the Si—H bond dissociation in the molecular layer of SiH, by supplying a gas including silicon and chlorine during a time period in which the substrate passes through the second process region.