The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2022
Filed:
Aug. 30, 2019
Meidensha Corporation, Tokyo, JP;
MEIDENSHA CORPORATION, Tokyo, JP;
Abstract
An atomic layer deposition apparatus () is equipped with a processing substrate () provided in a vacuum container (), and a shower head (). The processing substrate () is provided in the vacuum container (), and the shower head () is provided to be opposed to a processing surface of the processing substrate (). A high-concentration ozone gas, an unsaturated hydrocarbon gas, and an ALD source gas are supplied from the shower head () to the processing substrate (). The apparatus () repeats four steps of an oxidizing agent supplying step of supplying the high-concentration ozone gas and the unsaturated hydrocarbon gas into the vacuum container (), an oxidizing agent purging step of discharging the gas supplied in the oxidizing agent supplying step, a source gas supplying step of supplying a source gas to the vacuum container (), and a source gas purging step of discharging the source gas supplied to the vacuum container (), to form an oxide film on the surface of the processing substrate (). In the oxidizing agent purging step and/or the source gas purging step, the unsaturated hydrocarbon or ozone is used as the purging gas.