The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 09, 2022

Filed:

Mar. 18, 2021
Applicants:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

National Taiwan University, Taipei, TW;

Inventors:

Jenn-Gwo Hwu, Taipei, TW;

Ting-Hao Hsu, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03B 19/14 (2006.01); G05F 1/56 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H03B 19/14 (2013.01); G05F 1/561 (2013.01); H01L 29/51 (2013.01);
Abstract

A device is disclosed that includes an insulating layer, a first electrode, a second electrode, and a bottom electrode. The insulating layer is disposed on a first surface of a substrate. The first electrode and the second electrode are disposed on a first surface of the insulating layer. The first electrode receives an input signal, and the second electrode outputs, in response to the input signal, an output signal. The bottom electrode is disposed on a second surface, opposite to the first surface, of the substrate and receives an operating voltage to modify a frequency of the output signal.


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