The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 09, 2022

Filed:

Sep. 29, 2020
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Ping-Wei Wang, Hsin-Chu, TW;

Chih-Chuan Yang, Hsinchu, TW;

Yu-Kuan Lin, Taipei, TW;

Choh Fei Yeap, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 29/786 (2006.01); H01L 29/40 (2006.01); H01L 23/00 (2006.01); H01L 27/11 (2006.01); H01L 29/78 (2006.01); H01L 23/528 (2006.01); H01L 29/423 (2006.01); H01L 29/775 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01); H01L 23/5286 (2013.01); H01L 24/83 (2013.01); H01L 27/11 (2013.01); H01L 29/401 (2013.01); H01L 29/41733 (2013.01); H01L 29/41791 (2013.01); H01L 29/42392 (2013.01); H01L 29/775 (2013.01); H01L 29/7853 (2013.01); H01L 29/78696 (2013.01); H01L 2029/7858 (2013.01); H01L 2224/83097 (2013.01); H01L 2224/83099 (2013.01); H01L 2224/83896 (2013.01);
Abstract

A semiconductor structure and a method of forming the same are provided. In an embodiment, a semiconductor structure includes a source feature and a drain feature, a channel structure disposed between the source feature and the drain feature, a semiconductor layer disposed over the channel structure and the drain feature, a dielectric layer disposed over the semiconductor layer, a backside source contact over the source feature and extending through the semiconductor layer and the dielectric layer, and a backside power rail disposed over the dielectric layer and in contact with the backside source contact.


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