The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 09, 2022

Filed:

Apr. 22, 2020
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Chih-Kai Yang, Kaohsiung, TW;

Tzung-Ting Han, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H01L 27/11565 (2017.01); H01L 27/11524 (2017.01); H01L 27/11556 (2017.01); H01L 27/11519 (2017.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/00 (2006.01); H01L 27/1157 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01); H01L 23/562 (2013.01); H01L 27/1157 (2013.01); H01L 27/11519 (2013.01); H01L 27/11524 (2013.01); H01L 27/11556 (2013.01); H01L 27/11565 (2013.01);
Abstract

Provided is a memory device including a substrate, a stack structure, a first set of vertical channel structures, a second set of vertical channel structures, and a first slit. The stack structure is disposed on the substrate. The first and second sets of vertical channel structures are arranged along a Y direction and penetrate through the stack structure to contact the substrate. The first slit is disposed between the first and second sets of vertical channel structures, and penetrates through the stack structure to expose the substrate. The first slit includes a plurality of first sub-slits discretely disposed along a X direction.


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