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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11410879 B1

PDFFull Text
Date of Patent:
Aug. 09, 2022

Filed:

Apr. 07, 2020

Subtractive back-end-of-line vias

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Chanro Park, Clifton Park, NY (US);

Koichi Motoyama, Clifton Park, NY (US);

Kenneth Chun Kuen Cheng, Albany, NY (US);

Chih-Chao Yang, Glenmont, NY (US);

Assignee:

INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);

Attorneys:

Tutunjian & Bitetto, P.C.

L. Jeffrey Kelly

Primary Examiner:

Farun Lu

Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); H01L 23/535 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76849 (2013.01); H01L 21/76805 (2013.01); H01L 21/76846 (2013.01); H01L 21/76877 (2013.01); H01L 21/76895 (2013.01); H01L 23/5226 (2013.01); H01L 23/535 (2013.01); H01L 23/53209 (2013.01);
Abstract

Integrated chips and methods of forming the same include forming a conductive layer over a lower conductive line. The conductive layer is etched to form a via on the lower conductive line. A first insulating layer is formed around the via. The first insulating layer is etched back to a height below a height of the via. An upper conductive line is formed on the via, making contact with at least a top surface and a side surface of the via.

Find Patent Forward Citations

Park, Chanro. (2022). Subtractive back-end-of-line vias (U.S. Patent No. 11410879). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11410879

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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