The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2022
Filed:
Aug. 14, 2020
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Chin-Wei Liang, Zhubei, TW;
Chia-Shiung Tsai, Hsinchu, TW;
Cheng-Yuan Tsai, Chu-Pei, TW;
Hsing-Lien Lin, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/30 (2006.01); H01L 27/146 (2006.01); H01L 51/10 (2006.01); H01L 27/28 (2006.01);
U.S. Cl.
CPC ...
H01L 27/307 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 27/14665 (2013.01); H01L 51/107 (2013.01); H01L 27/281 (2013.01); H01L 27/286 (2013.01); H01L 2924/15159 (2013.01); H01L 2924/15162 (2013.01);
Abstract
Embodiments of forming an image sensor with organic photodiodes are provided. Trenches are formed in the organic photodiodes to increase the PN-junction interfacial area, which improves the quantum efficiency (QE) of the photodiodes. The organic P-type material is applied in liquid form to fill the trenches. A mixture of P-type materials with different work function values and thickness can be used to meet the desired work function value for the photodiodes.