The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2022
Filed:
Jul. 05, 2019
Applicant:
Globalfoundries U.s. Inc., Santa Clara, CA (US);
Inventors:
Wenjun Li, Saratoga Springs, NY (US);
Brian J. Greene, Portland, OR (US);
Tao Chu, Portland, OR (US);
Bingwu Liu, Clifton Park, NY (US);
Assignee:
GLOBALFOUNDRIES U.S. INC., Malta, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 27/088 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0924 (2013.01); H01L 27/0207 (2013.01); H01L 27/0886 (2013.01);
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to stacked gate transistors and methods of manufacture. The structure includes a stacked gate structure having a plurality of transistors with at least one floating node and at least one node to either ground or a supply voltage, and a contact to either of the ground or supply voltage and the at least one floating node being devoid of any contact.