The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2022
Filed:
May. 11, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chia-Hao Chang, Hsinchu, TW;
Jia-Chuan You, Taoyuan, TW;
Yu-Ming Lin, Hsinchu, TW;
Chih-Hao Wang, Hsinchu County, TW;
Wai-Yi Lien, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method of forming a semiconductor device includes forming an ILD structure over a source/drain region, forming a source/drain contact in the ILD structure and over the source/drain region, removing a portion of the source/drain contact such that a hole is formed in the ILD structure and over a remaining portion of the source/drain contact, forming a hole liner lining a sidewall of the hole after removing the portion of the source/drain contact, and forming a conductive structure in the hole.