The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2022
Filed:
Nov. 01, 2018
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Sheng-Liang Pan, Hsinchu, TW;
Bing-Hung Chen, San-Xia, TW;
Chia-Yang Hung, Kaohsiung, TW;
Jyu-Horng Shieh, Hsinchu, TW;
Shu-Huei Suen, Jhudong Township, TW;
Syun-Ming Jang, Hsinchu, TW;
Jack Kuo-Ping Kuo, Pleasanton, CA (US);
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
Embodiments described herein relate to plasma processes. A plasma process includes generating a plasma containing negatively charged oxygen ions. A substrate is exposed to the plasma. The substrate is disposed on a pedestal while being exposed to the plasma. While exposing the substrate to the plasma, a negative direct current (DC) bias voltage is applied to the pedestal to repel the negatively charged oxygen ions from the substrate.