The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 02, 2022

Filed:

Oct. 20, 2020
Applicant:

Sky Tech Inc., Hsinchu County, TW;

Inventors:

Jing-Cheng Lin, Hsinchu County, TW;

Ching-Liang Yi, Hsinchu County, TW;

Yun-Chi Hsu, Hsinchu County, TW;

Hsin-Yu Yao, Hsinchu County, TW;

Assignee:

SKY TECH INC., Hsinchu County, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); C23C 16/458 (2006.01); C23C 16/44 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45544 (2013.01); C23C 16/4412 (2013.01); C23C 16/4585 (2013.01); C23C 16/45502 (2013.01); C23C 16/45527 (2013.01); H01L 21/0228 (2013.01);
Abstract

An atomic layer deposition equipment and an atomic layer deposition process method are disclosed. The atomic layer deposition equipment includes a chamber, a substrate stage, at least one bottom pumping port, at least one hollow component, a baffle and a shower head assembly, wherein the hollow component has an exhaust hole. The baffle is below the hollow component and forms an upper exhaust path with the hollow component, so that the flow field of the precursor in the atomic layer deposition process can be adjusted to a slow flow field to make a uniform deposition on the substrate.


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