The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 26, 2022

Filed:

Nov. 29, 2018
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Shohei Ogawa, Tokyo, JP;

Junji Fujino, Tokyo, JP;

Satoru Ishikawa, Tokyo, JP;

Takumi Shigemoto, Tokyo, JP;

Yusuke Ishiyama, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); B23K 1/00 (2006.01); B23K 1/005 (2006.01); B23K 35/26 (2006.01); C22C 13/00 (2006.01); H01L 23/053 (2006.01); H01L 23/373 (2006.01); H01L 23/492 (2006.01); H01L 25/07 (2006.01); B23K 101/40 (2006.01);
U.S. Cl.
CPC ...
H01L 24/32 (2013.01); B23K 1/0016 (2013.01); B23K 1/0056 (2013.01); B23K 35/262 (2013.01); C22C 13/00 (2013.01); H01L 23/053 (2013.01); H01L 23/3735 (2013.01); H01L 23/492 (2013.01); H01L 24/29 (2013.01); H01L 24/83 (2013.01); H01L 25/072 (2013.01); B23K 2101/40 (2018.08); H01L 2224/29111 (2013.01); H01L 2224/29139 (2013.01); H01L 2224/29147 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/83815 (2013.01);
Abstract

A semiconductor device includes an insulating substrate formed by integrating a ceramic base plate and a cooling fin; a multiple of plate interconnection members; and a plurality of semiconductor elements. The one faces of the semiconductor elements are bonded to the ceramic base plate of the insulating substrate with a chip-bottom solder, and the other faces thereof are bonded to the plate-interconnection members with a chip-top solder so that plate interconnection members correspond respectively to the semiconductor elements. The chip-bottom solder and the chip-top solder both contain mainly Sn and 0.3-3 wt. % Ag and 0.5-1 wt. % Cu. This allows the semiconductor device to be reduced in size without impairing heat dissipation.


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