The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2022
Filed:
Aug. 08, 2020
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/033 (2006.01); H01L 21/768 (2006.01); H01L 29/40 (2006.01); H01L 21/3105 (2006.01); H01L 21/3115 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/3205 (2006.01); H01L 21/321 (2006.01); H01L 21/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0337 (2013.01); H01L 21/0228 (2013.01); H01L 21/3105 (2013.01); H01L 21/3115 (2013.01); H01L 21/31053 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01L 21/321 (2013.01); H01L 21/32051 (2013.01); H01L 21/76826 (2013.01); H01L 21/76829 (2013.01); H01L 29/401 (2013.01); H01L 21/32 (2013.01);
Abstract
A method includes forming a metal layer over a substrate; forming a dielectric layer over the metal layer; removing a first portion of the dielectric layer to expose a first portion of the metal layer, while a second portion of the dielectric layer remains on the metal layer; selectively forming a first inhibitor on the second portion of the dielectric layer, while the metal layer is free of coverage by the first inhibitor; and selectively depositing a first hard mask on the exposed first portion of the metal layer, while the first inhibitor is free of coverage by the first hard mask.