Image sensor and method for manufacturing deep trench and through-silicon via of the image sensor

Abstract

The present disclosure provides an image sensor and a method for manufacturing deep trench and through-silicon via of the image sensor, wherein: providing a pixel silicon wafer, performing a silicon wafer thinning on a second side of the pixel silicon wafer; forming a deep trench on the the second side of the pixel silicon wafer; filling the deep trench with organic material; coating photoresist on the second side of the pixel silicon wafer; etching the second side of the pixel silicon wafer to form a through-silicon via according to the through-silicon via pattern; depositing a dielectric protective layer on the surface of the deep trench and the surface of the through-silicon via; filling the deep trench with organic material; coating the photoresist on the second side of the pixel silicon wafer; etching the second side of the pixel silicon wafer to form a contact hole according to the contact hole pattern, depositing a barrier layer on the surface of the deep trench and the surface of the through-silicon via, filling the deep trench with a first metal, and form a seed layer on the surface of the through-silicon via; filling the through-silicon via with the first metal. The present disclosure reduces production steps of the image sensor.