The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 19, 2022

Filed:

Jul. 24, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Bi-Shen Lee, Hsin-Chu, TW;

Hsing-Lien Lin, Hsin-Chu, TW;

Hsun-Chung Kuang, Hsinchu, TW;

Yi Yang Wei, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 27/11507 (2017.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11507 (2013.01); H01L 28/56 (2013.01); H01L 28/60 (2013.01);
Abstract

In some embodiments, the present disclosure relates to an integrated chip. The integrated chip includes a bottom electrode disposed over a substrate and a top electrode disposed over the bottom electrode. A ferroelectric switching layer is arranged between the bottom electrode and the top electrode. The ferroelectric switching layer is configured to change polarization based upon one or more voltages applied to the bottom electrode or the top electrode. A seed layer is arranged between the bottom electrode and the top electrode. The seed layer and the ferroelectric switching layer have a non-monoclinic crystal phase.


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