The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2022
Filed:
Jul. 30, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Hwei-Jay Chu, Hsinchu, TW;
Chieh-Han Wu, Kaohsiung, TW;
Cheng-Hsiung Tsai, Zhunan Township, Miaoli County, TW;
Chih-Wei Lu, Hsinchu, TW;
Chung-Ju Lee, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A method for forming a semiconductor structure includes forming a first cap layer over a metal layer. The method also includes patterning the metal layer and the first cap layer to form openings exposing the gate structure, and forming a first dielectric layer in the openings, and patterning the first cap layer to form a via cap plug over the metal layer. The method also includes forming a second dielectric layer over the via cap plug and the metal layer, and forming a trench in the second dielectric material to expose the via cap plug. The method also includes removing the via cap plug to enlarge the trench and filling the trench with a conductive material.