The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 12, 2022

Filed:

Jun. 01, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Siao-Shan Wang, Hsinchu, TW;

Ching-Yu Chang, Yilang County, TW;

Chin-Hsiang Lin, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/033 (2006.01); H01L 21/027 (2006.01); G03F 7/40 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0332 (2013.01); G03F 7/40 (2013.01); H01L 21/0273 (2013.01);
Abstract

A method for lithography patterning includes forming an opening in a first layer over a substrate and coating a grafting solution over the first layer and filling in the opening. The grafting solution comprises a grafting compound and a solvent. The grafting compound comprises a grafting unit chemically bonded to a linking unit chemically bonded to a polymer backbone. The grafting unit is attachable to the first layer. The method further includes curing the grafting solution so that a first portion of the grafting compound is attached to a surface of the first layer, thereby forming a second layer over the surface of the first layer. The method further includes transferring a pattern including the first layer and the second layer to the substrate.


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