The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 12, 2022

Filed:

Oct. 19, 2020
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Yung-Chun Li, New Taipei, TW;

Yu-Ming Huang, Taipei, TW;

Chih-Huai Shih, Taichung, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/00 (2006.01); G11C 29/42 (2006.01); G06N 20/00 (2019.01); G06F 11/10 (2006.01);
U.S. Cl.
CPC ...
G11C 29/42 (2013.01); G06F 11/1068 (2013.01); G06N 20/00 (2019.01);
Abstract

Systems, methods, and apparatus including computer-readable mediums for determining read voltages for memory systems with machine learning (ML) are provided. In one aspect, a memory system includes a memory and a memory controller configured to: obtain a first reading output of memory data using a first read voltage corresponding to a first set of parameters associated with the memory data; if the first reading output fails to pass an Error Correction Code (ECC) test, obtain a second reading output of the memory data using a second read voltage corresponding to a second set of parameters associated with the memory data and including the first set of parameters, the second read voltage being generated using at least one ML algorithm based on the second set of parameters; and if the second reading output passes the ECC test, output the second reading output as a target reading output of the memory data.


Find Patent Forward Citations

Loading…