The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2022
Filed:
Oct. 17, 2019
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventor:
Sheng-Kai Su, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/24 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7606 (2013.01); H01L 29/24 (2013.01); H01L 29/66969 (2013.01); H01L 29/7851 (2013.01);
Abstract
A semiconductor device includes a substrate, a gate structure, semimetallic source/drain structures, and source/drain contacts. The gate structure is over the substrate. The semimetallic source/drain structures are respectively on opposite sides of the gate structure, in which a band structure of each of the semimetallic source/drain structures has a valence band and a conduction band at different symmetry k-points. The source/drain contacts land on top surfaces of the semimetallic source/drain structures, respectively.