The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2022
Filed:
Oct. 14, 2019
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Chien-Chao Huang, Hsin-Chu, TW;
Yee-Chia Yeo, Singapore, SG;
Chao-Hsiung Wang, Hsin-Chu, TW;
Chun-Chieh Lin, Hsinchu, TW;
Chenming Hu, Alamo, CA (US);
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/265 (2006.01); H01L 21/28 (2006.01); H01L 21/285 (2006.01); H01L 21/8238 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1054 (2013.01); H01L 21/02142 (2013.01); H01L 21/265 (2013.01); H01L 21/28052 (2013.01); H01L 21/28518 (2013.01); H01L 21/28525 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 29/66636 (2013.01); H01L 29/7834 (2013.01); H01L 29/7849 (2013.01);
Abstract
A method comprises providing a semiconductor alloy layer on a semiconductor substrate, forming a gate structure on the semiconductor alloy layer, forming source and drain regions in the semiconductor substrate on both sides of the gate structure, removing at least a portion of the semiconductor alloy layer overlying the source and drain regions, and forming a metal silicide region over the source and drain regions.