The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 05, 2022

Filed:

Nov. 30, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Wun-Jie Lin, Hsinchu, TW;

Han-Jen Yang, Taipei, TW;

Yu-Ti Su, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 29/66 (2006.01); H02H 9/04 (2006.01); H01L 27/088 (2006.01); H01L 29/10 (2006.01); H01L 21/8234 (2006.01); H01L 23/60 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0266 (2013.01); H01L 21/28123 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 23/60 (2013.01); H01L 27/0207 (2013.01); H01L 27/0292 (2013.01); H01L 27/0886 (2013.01); H01L 29/1095 (2013.01); H01L 29/66545 (2013.01); H02H 9/046 (2013.01);
Abstract

An Electro-Static Discharge (ESD) includes a first well having a first conductivity type on a substrate. The device further includes a second well within the first well. The second well has a second conductivity type. The device further includes a third well within the first well. The third well has the second conductivity type. The device further includes a first gate device disposed over the first well, a plurality of active regions between the first gate device and the dummy gate, and a dummy gate disposed within a space between the active regions. The dummy gate is positioned over a space between the second and third wells.


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