The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 05, 2022

Filed:

May. 04, 2021
Applicant:

United Semiconductor (Xiamen) Co., Ltd., Fujian, CN;

Inventors:

Hui Feng Chen, Fujian, CN;

Guang Yang, Fujian, CN;

Jinjian Ouyang, Fujian, CN;

Linshan Yuan, Fujian, CN;

Chin-Chun Huang, Hsinchu County, TW;

Wen Yi Tan, Fujian, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/552 (2006.01); H01L 29/40 (2006.01); H01L 23/522 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 23/552 (2013.01); H01L 23/5227 (2013.01); H01L 29/402 (2013.01); H01L 27/092 (2013.01);
Abstract

A radiofrequency device includes a semiconductor substrate, an inductor structure, a shielding structure, and a mask pattern. The semiconductor substrate includes a first region and a second region. The inductor structure is disposed on the first region of the semiconductor substrate. The shielding structure is disposed on the first region of the semiconductor substrate and located between the inductor structure and the semiconductor substrate in a vertical direction. The mask pattern is disposed on the semiconductor substrate. A first portion of the mask pattern is disposed on the shielding structure and directly contacts the shielding structure, and a top surface of the shielding structure is completely covered by the first portion of the mask pattern.


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