The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 05, 2022

Filed:

Jan. 04, 2021
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Scott J. Derner, Boise, ID (US);

Charles L. Ingalls, Meridian, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/24 (2006.01); G11C 11/4097 (2006.01); H01L 27/108 (2006.01); G11C 11/4091 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01); H01L 27/11507 (2017.01); H01L 27/11509 (2017.01);
U.S. Cl.
CPC ...
G11C 11/4097 (2013.01); G11C 11/4091 (2013.01); H01L 27/10808 (2013.01); H01L 27/10897 (2013.01); H01L 27/1207 (2013.01); H01L 27/11507 (2013.01); H01L 27/11509 (2013.01); H01L 29/78642 (2013.01);
Abstract

In the examples disclosed herein, a memory array can have a first group of memory cells coupled to a first digit line at a first level and a second group of memory cells coupled to a second digit line at the first level. A third digit line can be at a second level and can be coupled to a main sense amplifier. A first vertical thin film transistor (TFT) can be at a third level between the first and second levels can be coupled between the first digit line and the third digit line. A second vertical TFT can be at the third level and can be coupled between the second digit line and the third digit line. A local sense amplifier can be coupled to the first and second digit lines.


Find Patent Forward Citations

Loading…