The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2022
Filed:
Dec. 05, 2018
Applicant:
Basf SE, Ludwigshafen am Rhein, DE;
Inventors:
Jhih Jheng Ke, Taoyuan, TW;
Andreas Klipp, Ludwigshafen, DE;
Yi Ping Cheng, Taoyuan, TW;
Joannes Theodorus Valentinus Hoogboom, Ludwigshafen, DE;
Assignee:
BASF SE, Ludwigshafen am Rhein, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C11D 7/08 (2006.01); C11D 3/24 (2006.01); C11D 3/00 (2006.01); C11D 3/20 (2006.01); C11D 3/30 (2006.01); C11D 3/34 (2006.01); C11D 11/00 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C11D 3/245 (2013.01); C11D 3/0073 (2013.01); C11D 3/2086 (2013.01); C11D 3/30 (2013.01); C11D 3/3409 (2013.01); C11D 11/0047 (2013.01); H01L 21/02063 (2013.01);
Abstract
A cleaning composition for post-etch or post ash residue removal from a substrate used in semiconductor industry and a corresponding use of said cleaning composition is described. Further described is a process for the manufacture of a semiconductor device from a semiconductor substrate, comprising the step of post-etch or post ash residue removal from a substrate by contacting the substrate with a cleaning composition according to the invention.