The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2022
Filed:
Aug. 08, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a substrate, an isolation structure, a first gate structure, a first gate spacer, and an epitaxy structure. The substrate has a semiconductor fin. The isolation structure is over the substrate and laterally surrounds the semiconductor fin. The first gate structure is over the substrate and crosses the semiconductor fin. The first gate spacer extends along a sidewall of the first gate structure, in which the first gate spacer has a stepped sidewall distal to the first gate structure. The epitaxy structure is over the semiconductor fin, in which the epitaxy structure is in contact with the stepped sidewall of the first gate spacer.