The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2022
Filed:
Mar. 02, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Guo-Huei Wu, Tainan, TW;
Po-Chun Wang, Hsinchu, TW;
Hui-Zhong Zhuang, Kaohsiung, TW;
Chih-Liang Chen, Hsinchu, TW;
Li-Chun Tien, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
An integrated circuit includes a first transistor, a second transistor, and a first insulating layer. The first transistor is disposed in a first layer and comprises a first gate. The second transistor is disposed in a second layer above the first layer and comprises a second gate. The first gate and second gate are separated from each other in a first direction. The first insulating layer is disposed between the first gate of the first transistor and the second gate of the second transistor. The first insulating layer is configured to electrically insulate the first gate of the first transistor from the second gate of the second transistor.