The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2022
Filed:
Jan. 06, 2020
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Ningbo Semiconductor International Corporation, Ningbo, CN;
Zuopeng He, Shanghai, CN;
Ji Guang Zhu, Shanghai, CN;
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Ningbo Semiconductor International Corporation, Ningbo, CN;
Abstract
Interconnect structures are provided. An interconnect structure includes a substrate; a first dielectric layer on the substrate and including an opening for a first interconnect layer extending to the substrate; a first metal layer having a first portion in the opening and a second portion in contact with the first portion and on a portion of the first dielectric layer adjacent to the opening; a second dielectric layer on the first dielectric layer and on the first metal layer, the second dielectric layer including a trench for a second interconnect layer, the trench exposing the second portion of the first metal layer; and a second metal layer in the trench, wherein the second portion of the first metal layer forms a lower portion of the second interconnect layer.