The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 28, 2022

Filed:

Jun. 30, 2020
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Fumiaki Ariyoshi, Miyagi, JP;

Masanori Asahara, Miyagi, JP;

Shunsuke Aizawa, Miyagi, JP;

Akihito Fushimi, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H01L 21/687 (2006.01); H01L 21/67 (2006.01); H01L 21/3065 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
H01L 21/68735 (2013.01); H01J 37/32642 (2013.01); H01L 21/3065 (2013.01); H01L 21/67069 (2013.01); H01J 2237/334 (2013.01); H01L 21/6831 (2013.01);
Abstract

An etching method is performed using a plasma processing apparatus that includes a processing chamber equipped with a support stage that accommodates a substrate, a first annular member disposed around the substrate and at least a part of the first annular member is disposed in a space between a lower surface of an outer peripheral portion of the substrate and an upper surface of the support stage, and a second annular member disposed outside the first annular member. The etching method includes adjusting a dielectric constant in the space using the first annular member in accordance with consumption of the second annular member; and etching the substrate.


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