The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 21, 2022

Filed:

Jan. 09, 2019
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Yoshihide Kihara, Miyagi, JP;

Takahiro Yokoyama, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01J 37/32 (2006.01); C23C 16/455 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 21/683 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0228 (2013.01); C23C 16/45525 (2013.01); H01J 37/32724 (2013.01); H01J 37/32862 (2013.01); H01L 21/0206 (2013.01); H01L 21/0217 (2013.01); H01L 21/02112 (2013.01); H01L 21/02164 (2013.01); H01L 21/02175 (2013.01); H01L 21/02186 (2013.01); H01L 21/02205 (2013.01); H01L 21/02211 (2013.01); H01L 21/02274 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01L 21/32137 (2013.01); H01L 21/32139 (2013.01); H01J 2237/002 (2013.01); H01J 2237/332 (2013.01); H01J 2237/334 (2013.01); H01J 2237/335 (2013.01); H01L 21/67248 (2013.01); H01L 21/6831 (2013.01);
Abstract

A film forming method for forming a film on a pattern and cleaning a space of a processing container configured to perform therein a plasma processing under a reduced pressure environment. The space is provided with a pedestal and an upper electrode configured to supply radio-frequency power. The upper electrode is disposed in the space to face the pedestal. The method includes: placing a substrate having the pattern on the pedestal provided in the space of the processing container configured to perform therein a plasma processing under a reduced pressure environment; adjusting temperature of a main surface of the substrate for each of a plurality of regions on the main surface of the substrate; and after the adjusting with the substrate on the pedestal, repeating an ordered sequence of a first step of forming a deposition film on the pattern of the substrate and on an inner surface of the processing container, wherein the inner surface includes an inner surface of the upper electrode; and a second step of supplying electric power only to the upper electrode to generate plasma in the space, thereby cleaning the space and the inner surface.


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