The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 21, 2022

Filed:

Apr. 27, 2017
Applicant:

Kwansei Gakuin Educational Foundation, Nishinomiya, JP;

Inventors:

Tadaaki Kaneko, Sanda, JP;

Yasunori Kutsuma, Sanda, JP;

Daichi Dojima, Sanda, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/36 (2006.01); C01B 32/188 (2017.01); H01L 21/3065 (2006.01); C30B 33/02 (2006.01); C30B 23/06 (2006.01);
U.S. Cl.
CPC ...
C30B 29/36 (2013.01); C01B 32/188 (2017.08); C30B 23/063 (2013.01); C30B 33/02 (2013.01); H01L 21/3065 (2013.01);
Abstract

A method includes a graphene precursor formation process of: heating a SiC substrate to sublimate Si atoms in a Si surface of the SiC substrate so that a graphene precursor is formed; and stopping the heating before the graphene precursor is covered with graphene. A SiC substrate to be treated in the graphene precursor formation process is provided with a step including a plurality of molecular layers. The step has a stepped structure in which a molecular layer whose C atom has two dangling bonds is disposed closer to the surface than a molecular layer whose C atom has one dangling bond.


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