The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 14, 2022

Filed:

May. 09, 2018
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventor:

Shigeru Tahara, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/67 (2006.01); H01L 21/687 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32449 (2013.01); H01J 37/32522 (2013.01); H01J 37/32724 (2013.01); H01J 37/32733 (2013.01); H01L 21/02126 (2013.01); H01L 21/02203 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01L 21/67069 (2013.01); H01L 21/67167 (2013.01); H01L 21/67196 (2013.01); H01L 21/68707 (2013.01); H01J 2237/334 (2013.01);
Abstract

A plasma processing apparatus of an embodiment includes a chamber body, a stage, a gas supply system, and a plasma generator. The chamber body provides an inner space thereof as a chamber. The stage is provided in the chamber. In the stage, a flow channel for a refrigerant is formed. The gas supply system is configured to supply a first gas causing capillary condensation thereof in a porous film and a second gas for etching a porous film to the chamber. The plasma generator is configured to generate plasma of a gas supplied to the chamber. The gas supply system provides a first flow passage connecting a source of the second gas to the chamber, a second flow passage connecting a source of the first gas to the first flow passage, and a third flow passage connecting a gas discharging apparatus to the second flow passage.


Find Patent Forward Citations

Loading…