The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 14, 2022

Filed:

Mar. 19, 2019
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Anton deVilliers, Albany, NY (US);

Ronald Nasman, Albany, NY (US);

Jeffrey Smith, Albany, NY (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01); H01L 21/027 (2006.01); G03F 7/095 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
G03F 7/2022 (2013.01); G03F 7/095 (2013.01); G03F 7/20 (2013.01); G03F 7/2051 (2013.01); H01L 21/0274 (2013.01); H01L 21/67017 (2013.01);
Abstract

Techniques herein include processes and systems by which a reproducible CD variation pattern can be mitigated or corrected to yield desirable CDs from microfabrication patterning processes, via resolution enhancement. A repeatable portion of CD variation across a set of wafers is identified, and then a correction exposure pattern is generated. A direct-write projection system exposes this correction pattern on a substrate as a component exposure, augmentation exposure, or partial exposure. A conventional mask-based photolithographic system executes a primary patterning exposure as a second or main component exposure. The two component exposures when combined enhance resolution of the patterning exposure to improve CDs on the substrate being processed without measure each wafer.


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