The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2022
Filed:
May. 22, 2020
Senic Inc., Cheonan-si, KR;
Jong Hwi Park, Suwon-si, KR;
Myung-Ok Kyun, Suwon-si, KR;
Jongmin Shim, Hwaseong-si, KR;
Eun Su Yang, Suwon-si, KR;
Byung Kyu Jang, Suwon-si, KR;
Jung Woo Choi, Suwon-si, KR;
Sang Ki Ko, Suwon-si, KR;
Kap-Ryeol Ku, Suwon-si, KR;
Jung-Gyu Kim, Suwon-si, KR;
SENIC INC., Cheonan-si, KR;
Abstract
A method for preparing a SiC ingot includes preparing a crucible assembly comprising a crucible body having an internal space, loading a raw material into the internal space of the crucible body and placing a plurality of SiC seed in the internal space of the crucible body at regular intervals spaced apart from the raw material, and growing the SiC ingot from the plurality of SiC seed by adjusting the internal space of the crucible body to a crystal growth atmosphere such that the raw material is vapor-transported and deposited to the plurality of SiC seed. A density of the crucible body may be 1.70 to 1.92 g/cm.