The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 14, 2022

Filed:

Mar. 10, 2021
Applicant:

Showa Denko Materials Co., Ltd., Tokyo, JP;

Inventors:

Keisuke Inoue, Tokyo, JP;

Shunsuke Kondo, Tokyo, JP;

Yuya Otsuka, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09G 1/02 (2006.01); H01L 21/306 (2006.01); H01L 21/768 (2006.01); C09K 3/14 (2006.01); H01L 21/321 (2006.01); B24B 37/00 (2012.01); H01L 21/3105 (2006.01);
U.S. Cl.
CPC ...
C09G 1/02 (2013.01); B24B 37/00 (2013.01); C09K 3/14 (2013.01); H01L 21/30604 (2013.01); H01L 21/31053 (2013.01); H01L 21/3212 (2013.01); H01L 21/7684 (2013.01);
Abstract

A polishing method includes polishing a substrate with a CMP polishing liquid. The substrate includes a barrier metal, a metal film, and a silicon dioxide film. The metal film includes one or more of copper, copper alloy, copper oxide, or copper alloy oxide. The CMP polishing liquid includes abrasive particles, a metal oxide dissolving agent, an oxidizing agent, a water-soluble polymer, and an alkali metal ion. The pH of the CMP polishing liquid is 7.0 to 11.0. Surface potentials of the abrasive particles and the metal film have the same sign and a product of the surface potential (mV) of the abrasive particles and the surface potential (mV) of the metal film is 300 to 980 mVupon polishing the substrate with the CMP polishing liquid.


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