The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 07, 2022

Filed:

Mar. 05, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Seiji Takahashi, Hsinchu, TW;

Jhy-Jyi Sze, Hsin-Chu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H04N 5/359 (2011.01); H04N 5/378 (2011.01); H01L 27/146 (2006.01); H04N 5/3745 (2011.01);
U.S. Cl.
CPC ...
H04N 5/3594 (2013.01); H01L 27/1461 (2013.01); H01L 27/1463 (2013.01); H01L 27/14607 (2013.01); H01L 27/14612 (2013.01); H01L 27/14643 (2013.01); H04N 5/378 (2013.01); H04N 5/3745 (2013.01); H01L 27/1464 (2013.01);
Abstract

An image sensor semiconductor device includes a first photodiode disposed in a semiconductor substrate and configured to generate charges in response to radiation, a first transistor disposed adjacent to the first photodiode, a floating diffusion region configured to store the generated charges, a reset transistor configured to reset the floating diffusion region, and a second transistor disposed over the substrate between the first photodiode and the reset transistor. The first transistor and the second transistor are configured to generate a first electric field and a second electric field, respectively, to move the charges generated by the first photodiode to the floating diffusion region.


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