The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2022
Filed:
Oct. 18, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Ju-Wang Hsu, Taipei, TW;
Chih-Yuan Ting, Taipei, TW;
Tang-Xuan Zhong, Kaohsiung, TW;
Yi-Nien Su, Hsinchu, TW;
Jang-Shiang Tsai, Zhubei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD, Hsinchu, TW;
Abstract
Methods for manufacturing semiconductor structures are provided. The method includes forming a first masking layer over a substrate and forming a second masking layer over the first masking layer. The method includes forming a photoresist pattern over the second masking layer and patterning the second masking layer through the photoresist pattern. The method further includes diminishing the photoresist pattern and patterning the second masking layer and the first masking layer through the diminished photoresist pattern. The method further includes removing the diminished photoresist pattern and patterning the semiconductor substrate through the second masking layer and the first masking layer to form a fin structure. The method further includes forming a gate structure over the fin structure.