The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 07, 2022

Filed:

Jan. 03, 2020
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Alexander Reznicek, Troy, NY (US);

Ruilong Xie, Niskayuna, NY (US);

Chun-Chen Yeh, Danbury, CT (US);

Balasubramanian S Pranatharthi Haran, Watervliet, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7827 (2013.01); H01L 21/0217 (2013.01); H01L 21/02274 (2013.01); H01L 29/0847 (2013.01); H01L 29/1037 (2013.01); H01L 29/66553 (2013.01); H01L 29/66666 (2013.01);
Abstract

A semiconductor device, and method of fabricating the device. The device including a plurality of vertical transistors, each vertical transistor having a raised semiconductor island having a first cross-sectional profile, a source-drain region disposed above the raised semiconductor island, the source-drain region having a second cross-sectional profile, and a semiconductor channel disposed above the source-drain region, the semiconductor channel having a third cross-sectional profile. The second cross-sectional profile is asymmetric.


Find Patent Forward Citations

Loading…