The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 07, 2022

Filed:

Sep. 11, 2020
Applicant:

Wolfspeed, Inc., Durham, NC (US);

Inventors:

Woongsun Kim, Cary, NC (US);

Daniel J. Lichtenwalner, Raleigh, NC (US);

Naeem Islam, Morrisville, NC (US);

Sei-Hyung Ryu, Cary, NC (US);

Assignee:

Wolfspeed, Inc., Durham, NC (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7813 (2013.01); H01L 29/41741 (2013.01); H01L 29/42376 (2013.01); H01L 29/66477 (2013.01);
Abstract

Semiconductor devices and methods of forming a semiconductor device that includes a polysilicon layer that may improve device reliability and/or a functioning of the device. An example device may include a wide band-gap semiconductor layer structure including a drift region that has a first conductivity type; a plurality of gate trenches in an upper portion of the semiconductor layer structure, each gate trench having a bottom surface, a first sidewall, a second sidewall, and an upper opening; and a plurality of polysilicon layers, each polysilicon layer on the second sidewall of a respective gate trench.


Find Patent Forward Citations

Loading…