The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 07, 2022

Filed:

May. 08, 2020
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Lingming Yang, Meridian, ID (US);

Karthik Sarpatwari, Boise, ID (US);

Fabio Pellizzer, Boise, ID (US);

Nevil N. Gajera, Meridian, ID (US);

Lei Wei, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 27/24 (2006.01); H01L 23/528 (2006.01); H01L 45/00 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 27/249 (2013.01); H01L 23/528 (2013.01); H01L 23/53257 (2013.01); H01L 45/06 (2013.01); H01L 45/1226 (2013.01); H01L 45/1253 (2013.01); H01L 45/144 (2013.01); H01L 45/1675 (2013.01);
Abstract

An example apparatus includes a three-dimensional (3D) memory array including a sense line and a plurality of vertical stacks. Each respective on of the vertical stacks includes a different respective portion of the sense line, a first memory cell coupled to that portion of the sense line, a second memory cell coupled to that portion of the sense line, a first access line coupled to the first memory cell and a second access line coupled to the second memory cell. The first and second access lines are perpendicular to the sense line.


Find Patent Forward Citations

Loading…