The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2022
Filed:
Jul. 31, 2020
Applicant:
Advanced Semiconductor Engineering, Inc., Kaohsiung, TW;
Inventors:
Wen Hung Huang, Kaohsiung, TW;
Min Lung Huang, Kaohsiung, TW;
Assignee:
ADVANCED SEMICONDUCTOR ENGINEERING, INC., Kaohsiung, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05K 1/02 (2006.01); H05K 1/11 (2006.01); H01L 23/498 (2006.01); H01L 21/48 (2006.01); H05K 1/03 (2006.01); H05K 1/18 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49822 (2013.01); H01L 21/486 (2013.01); H01L 21/4857 (2013.01); H01L 23/49838 (2013.01); H05K 1/0298 (2013.01); H05K 1/11 (2013.01); H05K 1/0313 (2013.01); H05K 1/18 (2013.01);
Abstract
A wiring structure and a method for manufacturing the same are provided. The wiring structure includes a conductive structure and at least one conductive through via. The conductive structure includes a plurality of dielectric layers, a plurality of circuit layers in contact with the dielectric layers, and a plurality of dam portions in contact with the dielectric layers. The dam portions are substantially arranged in a row and spaced apart from one another. The conductive through via extends through the dam portions.