The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 07, 2022

Filed:

Jan. 23, 2019
Applicant:

Mitsubishi Materials Corporation, Tokyo, JP;

Inventors:

Tomoya Oohiraki, Saitama, JP;

Sotaro Oi, Saitama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/373 (2006.01); H01L 23/367 (2006.01); H01L 25/07 (2006.01); H01L 25/18 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3735 (2013.01); H01L 23/367 (2013.01); H01L 23/3677 (2013.01); H01L 25/072 (2013.01); H01L 25/18 (2013.01);
Abstract

A heat sink-attached power module substrate board has a ratio (A1×t1×σ1×α1)/{(A2×t2×σ2×α2)+(A3×t3×σ3×α3)} at 25° C. is not less than 0.70 and not more than 1.30, where A1 (mm) is a bonding area of a second layer and a first layer composing a circuit layer; t1 (mm) is an equivalent board thickness, σ1 (N/mm) is yield strength, and α1 (/K) is a linear expansion coefficient, all of the second layer, where A2 (mm) is a bonding area of the heat radiation-side bonding material and the metal layer; t2 (mm) is equivalent board thickness, σ2 (N/mm) is yield strength, and α2 (/K) is a linear expansion coefficient, all of the heat radiation-side bonding material, and where A3 (mm) is a bonding area of the heat sink and the heat radiation-side bonding material; t3 (mm) is equivalent board thickness, σ3 (N/mm) is yield strength, and α3 (/K) is a linear expansion coefficient, all of the heat sink.


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