The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 07, 2022

Filed:

Aug. 20, 2019
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventor:

Seiji Nagahara, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G05B 19/4097 (2006.01); G03F 7/20 (2006.01); G03F 7/004 (2006.01); G03F 7/00 (2006.01);
U.S. Cl.
CPC ...
G03F 7/2002 (2013.01); G03F 7/0035 (2013.01); G03F 7/0042 (2013.01); G03F 7/2022 (2013.01); G03F 7/70033 (2013.01); G05B 19/4097 (2013.01); G05B 2219/45028 (2013.01);
Abstract

A method of simulating a resist pattern according to an exemplary embodiment includes a step (A) of calculating a latent image of a concentration of an active species in a resist film that has been radiated by a radioactive ray along a target pattern with respect to a radiation position of the radioactive ray, a step (B) of calculating a change rate of the concentration with respect to the radiation position at an edge of the target pattern on the basis of the latent image, a step (C) of calculating a probabilistic variation at the edge of the target pattern, and a step (D) of calculating a variation in pattern edge roughness from the change rate of the concentration and the probabilistic variation.


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